전자부품 데이터시트 검색엔진 |
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BT134-D 데이터시트(PDF) 1 Page - SemiWell Semiconductor |
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BT134-D 데이터시트(HTML) 1 Page - SemiWell Semiconductor |
1 / 6 page Absolute Maximum Ratings ( T J = 25°C unless otherwise specified ) Symbol Parameter Condition Ratings Units VDRM Repetitive Peak Off-State Voltage 600 V IT(RMS) R.M.S On-State Current TC = 104 °C, Full Sine wave 4A ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 25/27 A I2t I2t for Fusing t = 10ms 3.1 A2s PGM Peak Gate Power Dissipation 5 W PG(AV) Average Gate Power Dissipation Over any 20ms period 0.5 W IGM Peak Gate Current 2 A VGM Peak Gate Voltage 5 V TJ Operating Junction Temperature - 40 ~ 125 °C TSTG Storage Temperature - 40 ~ 150 °C BT134-D Mar, 2004. Rev. 0 Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ High Commutation dv/dt ◆ Sensitive Gate Triggering 4 Mode General Description This device is sensitive gate triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. 2.T2 3.Gate 1.T1 Symbol ○ ○ ○ ▼▲ 1/6 SemiWell Semiconductor Bi-Directional Triode Thyristor copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. TO-126 3 2 1 Preliminary |
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