![]() |
전자부품 데이터시트 검색엔진 |
|
MCK100-8 데이터시트(HTML) 2 Page - SemiWell Semiconductor |
|
MCK100-8 데이터시트(HTML) 2 Page - SemiWell Semiconductor |
2 / 5 page ![]() Electrical Characteristics ( T C = 25 °C unless otherwise noted ) Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VAK = VDRM or VRRM ; RGK = 1000 Ω TC = 25 °C TC = 125 °C ─ ─ ─ ─ 10 200 ㎂ VTM Peak On-State Voltage (1) ( ITM = 1 A, Peak ) ─ 1.2 1.7 V IGT Gate Trigger Current (2) VAK = 6 V, RL=100 Ω TC = 25 °C TC = - 40 °C ─ ─ ─ ─ 200 500 ㎂ VGT Gate Trigger Voltage (2) VD = 7 V, RL=100 Ω TC = 25 °C TC = - 40 °C ─ ─ ─ ─ 0.8 1.2 V VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ── V dv/dt Critical Rate of Rise Off-State Voltage VD = 0.67 VDRM , Exponential waveform, RGK = 1000 Ω TJ=125°C 500 800 ─ V/㎲ di/dt Critical Rate of Rise On-State Current ITM = 2A ; Ig = 10mA ── 50 A/㎲ IH Holding Current VAK = 12 V, Gate Open Initiating Curent = 50mA TC = 25 °C TC = - 40 °C ─ ─ 2 ─ 5.0 10 mA Rth(j-c) Thermal Impedance Junction to case ── 15 °C/W Rth(j-a) Thermal Impedance Junction to Ambient ── 125 °C/W MCK100-8 2/5 ※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. Does not include RGK in measurement. |