Hardware Design Guide, Revision 1

TSI-8

November 2, 2005

8K x 8K Time-Slot Interchanger

Agere Systems Inc.

11

4 Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress

ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect

device reliability.

4.1 Handling Precautions

Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. Agere

employs both a human-body model (HBM) and a charged-device model (CDM) qualification requirement in order to deter-

mine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit param-

eters used in each of the models, as defined by JEDEC’s JESD22-A114 (HBM) and JESD22-C101 (CDM) standards.

4.2 ESD Tolerance

4.3 Package Thermal Characteristics

Table 4-1. Absolute Maximum Ratings

Parameter

Min

Max

Unit

4.2

V

1.8

V

Input Voltage:

TXD[31:00]

All Other Inputs

–0.5

–0.3

5.5

V

Storage Temperature

–40

125

°C

Junction Temperature

—

125

°C

Table 4-2. ESD Tolerance

Device

Voltage

Type

TSI-8

2,000 V

HBM (human-body model)

500 V

CDM (charged-device model)

Table 4-3. Power Consumption

Supply Voltage

*MPUCLK = 66 MHz, CHICLK = 16.384 MHz, TA = 25 °C, all CHIs active, all outputs loaded with 50 pF.

Max

100 mW at 3.3 V

150 mW at 3.47 V

275 mW at 1.5 V

325 mW at 1.6 V