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TSI-8 데이터시트(PDF) 11 Page - Agere Systems |
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TSI-8 데이터시트(HTML) 11 Page - Agere Systems |
11 / 25 page Hardware Design Guide, Revision 1 TSI-8 November 2, 2005 8K x 8K Time-Slot Interchanger Agere Systems Inc. 11 4 Absolute Maximum Ratings Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. 4.1 Handling Precautions Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. Agere employs both a human-body model (HBM) and a charged-device model (CDM) qualification requirement in order to deter- mine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit param- eters used in each of the models, as defined by JEDEC’s JESD22-A114 (HBM) and JESD22-C101 (CDM) standards. 4.2 ESD Tolerance 4.3 Package Thermal Characteristics ΘJA = 24.0 °C/W. Table 4-1. Absolute Maximum Ratings Parameter Min Max Unit Supply Voltage (VDD33)–0.5 4.2 V Supply Voltage (VDD15)–0.5 1.8 V Input Voltage: TXD[31:00] All Other Inputs –0.5 –0.3 5.5 VDD33 + 0.3 V Storage Temperature –40 125 °C Junction Temperature — 125 °C Table 4-2. ESD Tolerance Device Voltage Type TSI-8 2,000 V HBM (human-body model) 500 V CDM (charged-device model) Table 4-3. Power Consumption Supply Voltage Typ* *MPUCLK = 66 MHz, CHICLK = 16.384 MHz, TA = 25 °C, all CHIs active, all outputs loaded with 50 pF. Max VDD33 100 mW at 3.3 V 150 mW at 3.47 V VDD15 275 mW at 1.5 V 325 mW at 1.6 V |
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