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EN29LV320 데이터시트(HTML) 1 Page - Eon Silicon Solution Inc.

부품명 EN29LV320
상세내용  32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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제조사  EON [Eon Silicon Solution Inc.]
홈페이지  http://www.essi.com.tw
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EN29LV320 데이터시트(HTML) 1 Page - Eon Silicon Solution Inc.

 
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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
1
EN29LV320
Rev. E, Issue Date: 2006/05/16
FEATURES
• Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
• High performance
- Access times as fast as 70 ns
• Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1
µA current in standby or automatic
sleep mode.
• Flexible Sector Architecture:
- Eight 8-Kbyte sectors, sixty-three 64k-byte
sectors.
- 8-Kbyte sectors for Top or Bottom boot.
- Sector/Sector Group protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
• High performance program/erase speed
- Word program time: 8µs typical
- Sector erase time: 500ms typical
- Chip erase time: 70s typical
• JEDEC Standard compatible
• Standard DATA# polling and toggle bits
feature
• Unlock Bypass Program command supported
• Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
• Support JEDEC Common Flash Interface
(CFI).
• Low Vcc write inhibit < 2.5V
• Minimum 100K program/erase endurance
cycles.
• RESET# hardware reset pin
- Hardware method to reset the device to read
mode.
• WP#/ACC input pin
- Write Protect (WP#) function allows
protection of outermost two boot sectors,
regardless of sector protect status
- Acceleration (ACC) function provides
accelerated program times
• Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm FBGA
• Commercial and Industrial Temperature
Range.
GENERAL DESCRIPTION
The EN29LV320 is a 32-Megabit, electrically erasable, read/write non-volatile flash memory, organized
as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8µs. The
EN29LV320 features 3.0V voltage read and write operation, with access times as fast as 70ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV320 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full Chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
.
EN29LV320
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only


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