전자부품 데이터시트 검색엔진 |
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ES25P80-75CG2Y 데이터시트(PDF) 2 Page - Excel Semiconductor Inc. |
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ES25P80-75CG2Y 데이터시트(HTML) 2 Page - Excel Semiconductor Inc. |
2 / 35 page ES I ES I 2 Rev. 0D May, 11, 2006 ES25P80 Excel Semiconductor inc. ADVANCED INFORMATION The ES25P80 device is a 3.0 volt (2.7V to 3.6V) single power flash memory device. ES25P80 con- sists of Sixteen sectors, each with 512 Kb memory. Data appears on SI input pin when inputting data into the memory and on the SO output pin when outputting data from the memory. The devices are designed to be programmed in-system with the standard system 3.0 volt Vcc supply. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory supports Sector Erase and Bulk Erase instructions. Each device requires only a 3.0 volt power supply (2.7V to 3.6V) for both read and write functions. Internally generated and regulated voltages are pro- vided for program operations. This device does not require Vpp supply. GENERAL PRODUCT DESCRIPTION BLOCK DIAGRAM PS Logic IO DATA PATH Array - R Array - L RD SRAM |
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