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ES29DL800FB-12RTG 데이터시트(PDF) 7 Page - Excel Semiconductor Inc. |
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ES29DL800FB-12RTG 데이터시트(HTML) 7 Page - Excel Semiconductor Inc. |
7 / 50 page ES I ES I 7 Rev. 1D January 5, 2006 ES29LV800D Excel Semiconductor inc. The device enters the CMOS standby mode when CE# and RESET# pins are both held at Vcc+0.3V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within Vcc+0.3V, the device will be still in the standby mode, but the standby current will be greater than the CMOS standby current (0.2uA typi- cally). When the device is in the standby mode, only standard access time (tCE) is required for read access, before it is ready for read data. And even if the device is deselected by CE# pin during erase or programming operation, the device draws active cur- rent until the operation is completely done. While the device stays in the standby mode, the output is placed in the high impedance state, independent of the OE# input. The device can enter the deep power-down mode where current consumption is greatly reduced down to less than 0.2uA typically by the following three ways: - CMOS standby ( CE#, RESET# = Vcc + 0.3V ) - During the device reset ( RESET# = Vss + 0.3V ) - In Autosleep Mode ( after tACC + 30ns ) Refer to the CMOS DC characteristics Table 7 for further current specification. Autosleep Mode The device automatically enters a deep power-down mode called the autosleep mode when addresses remain stable for tACC+30ns. In this mode, current consumption is greatly reduced ( less than 0.2uA typical ), regardless of CE#, WE# and OE# control signals. Writing Commands To write a command or command sequences to ini- tiate some operations such as program or erase, the system must drive WE# and CE# to VIL, and OE# to VIH. For program operations, the BYTE# pin deter- mines whether the device accepts program data in bytes or words. Refer to “BYTE# timings for Write Operations” in the Fig. 19 for more information. Unlock Bypass Mode To reduce more the programming time, an unlock- bypass mode is provided. Once the device enters this mode, only two write cycles are required to ini- tiate the programming operation instead of four cycles in the normal program command sequences which are composed of two unlock cycles, program set-up cycle and the last cycle with the program data and addresses. In this mode, two unlock cycles are saved ( or bypassed ). Sector Addresses The entire memory space of cell array is divided into a many of small sectors: 16Kbytes x 1, 8Kbytes x 2, 32Kbytes x 1 and 64Kbytes x 15 main sectors. In erase operation, a single sector, multiple sectors, or the entire device (chip erase) can be selected for erase. The address space that each sector occupies is shown in detail in the Table 3-4. Autoselect Mode Flash memories are intended for use in applications where the local CPU alters memory contents. In such applications, manufacturer and device identifi- cation (ID) codes must be accessible while the device resides in the target system ( the so called “in-system program”). On the other hand, signature codes have been typically accessed by raising A9 pin to a high voltage in PROM programmers. How- ever, multiplexing high voltage onto address lines is not the generally desired system design practice. Therefore, in the ES29LV800 device an autoselect command is provided to allow the system to access the signature codes without any high voltage. The conventional A9 high-voltage method used in the PROM programers for signature codes are still sup- ported in this device. If the system writes the autoselect command sequence, the device enters the Autoselect mode. The system can then read some useful codes such as manufacturer and device ID from the internal reg- isters on DQ7 - DQ0. Standard read cycle timings apply in this mode. In the Autoselect mode, the fol- lowing three informations can be accessed through either autoselect command method or A9 high-volt- age autoselect method. Refer to the Table 2. - Manufacturer ID - Device ID - Sector protection verify Hardware Device Reset ( RESET# ) The RESET# pin provides a hardware method of resetting the device to read array data. When the RESET# pin is driven low for at least a period of tRP , |
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