KSD-T0O009-000

3

STK1040F

Electrical Characteristics

(Tc=25

°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

400

-

-

V

Gate threshold voltage

2.0

-

4.0

V

Drain-source cut-off current

-

-

1

µA

Gate leakage current

-

-

±100

nA

Drain-source on-resistance

④

-

0.46

0.53

Ω

Forward transfer conductance

④

-

6.2

-

S

Input capacitance

Ciss

-

950

1430

Output capacitance

Coss

-

120

180

Reverse transfer capacitance

Crss

f=1MHz

-

12

18

pF

Turn-on delay time

-

14

-

Rise time

-

89

-

Turn-off delay time

-

81

-

Fall time

-

81

-

ns

Total gate charge

-

28

42

Gate-source charge

-

4

6

Gate-drain charge

-

15

23

nC

Source-Drain Diode Ratings and Characteristics

(Tc=25

°C)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

Source current (DC)

-

-

10

Source current (Pulsed)

①

Integral reverse diode

in the MOSFET

-

-

40

A

Forward voltage

④

-

-

1.4

V

Reverse recovery time

-

290

-

ns

Reverse recovery charge

-

5.04

-

uC

Note ;

①

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

②

③

Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%

④

Essentially independent of operating temperature