전자부품 데이터시트 검색엔진 |
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CMPSH05-4 데이터시트(PDF) 1 Page - Central Semiconductor Corp |
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CMPSH05-4 데이터시트(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage VRRM 40 V Continuous Forward Current IF 500 mA Peak Repetitive Forward Current, tp ≤ 1ms IFRM 3.5 A Forward Surge Current, tp=8ms IFSM 10 A Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IR VR= 10V 20 µA IR VR= 30V 100 µA BVR IR= 500µA40 V VF IF= 100µA 0.13 V VF IF= 1.0mA 0.21 V VF IF= 10mA 0.27 V VF IF= 100mA 0.35 V VF IF= 500mA 0.47 V CT VR= 1.0V, f=1.0 MHz 50 pF CMPSH05-4 SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE SOT-23 CASE Central Semiconductor Corp. TM R0 (13-September 2004) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH05-4 is a HIGH CURRENT, LOW VF 40 volt Schottky Diode packaged in a space saving SOT-23 surface mount case. This device has been designed for small signal general purpose applications when small size and operational efficiency are prime requirements. SPECIFICATIONS: • Low VF = 0.35V max @ 100mA • VRRM = 40V • IF = 500mA MARKING CODE: C054 |
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유사한 설명 - CMPSH05-4 |
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