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74VHC245FT 데이터시트(PDF) 4 Page - Toshiba Semiconductor

부품명 74VHC245FT
상세설명  CMOS Digital Integrated Circuits Silicon Monolithic
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

74VHC245FT 데이터시트(HTML) 4 Page - Toshiba Semiconductor

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74VHC245FT
4
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, Ta = 25 �)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Symbol
VIH
VIL
VOH
VOL
IOZ
IIN
ICC
Test Condition
VIN = VIH or VIL
VIN = VIH or VIL
VIN = VIH or VIL
VOUT = VCC or GND
VIN = 5.5 V or GND
VIN = VCC or GND
IOH = -50 µA
IOH = -4 mA
IOH = -8 mA
IOL = 50 µA
IOL = 4 mA
IOL = 8 mA
VCC (V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
0 to 5.5
5.5
Min
1.50
VCC ×
0.7
1.9
2.9
4.4
2.58
3.94
Typ.
2.0
3.0
4.5
0.0
0.0
0.0
Max
0.50
VCC ×
0.3
0.1
0.1
0.1
0.36
0.36
±0.25
±0.1
4.0
Unit
V
V
V
V
µA
µA
µA
11.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 �)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Symbol
VIH
VIL
VOH
VOL
IOZ
IIN
ICC
Test Condition
VIN = VIH or VIL
VIN = VIH or VIL
VIN = VIH or VIL
VOUT = VCC or GND
VIN = 5.5 V or GND
VIN = VCC or GND
IOH = -50 µA
IOH = -4 mA
IOH = -8 mA
IOL = 50 µA
IOL = 4 mA
IOL = 8 mA
VCC (V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
0 to 5.5
5.5
Min
1.50
VCC × 0.7
1.9
2.9
4.4
2.48
3.80
Max
0.50
VCC × 0.3
0.1
0.1
0.1
0.44
0.44
±2.50
±1.0
40.0
Unit
V
V
V
V
µA
µA
µA
2021-12-01
Rev.5.0
©2017-2021
Toshiba Electronic Devices & Storage Corporation


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