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BUZ111S 데이터시트(PDF) 4 Page - Infineon Technologies AG |
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BUZ111S 데이터시트(HTML) 4 Page - Infineon Technologies AG |
4 / 8 page BUZ 111S Data Sheet 4 05.99 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge VDD = 40 V, ID = 80 A 27 nC 18 Qgs - - 61 Qgd Gate to drain charge VDD = 40 V, ID = 80 A 91.5 Gate charge total VDD = 40 V, ID = 80 A, VGS = 0 to 10 V - 125 185 Qg Gate plateau voltage VDD = 40 V, ID = 80 A V(plateau) 5.45 - V - Reverse Diode Inverse diode continuous forward current TC = 25 ˚C IS - - 80 A Inverse diode direct current,pulsed TC = 25 ˚C ISM - - 320 Inverse diode forward voltage VGS = 0 V, IF = 160 A VSD - 1.25 V 1.8 Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs trr - 105 ns 160 Reverse recovery charge VR = 30 V, IF=lS , diF/dt = 100 A/µs Qrr - µC 0.29 0.45 |
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