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1PS79SB70 데이터시트(PDF) 2 Page - NXP Semiconductors |
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1PS79SB70 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1998 Jul 16 2 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB70 FEATURES • Low forward voltage • High breakdown voltage • Guard ring protected • Ultra small plastic SMD package • Low capacitance. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. DESCRIPTION Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD package. Fig.1 Simplified outline (SC-79) and symbol. Marking code: G. handbook, halfpage ka Top view MAM403 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 70 V IF continuous forward current − 70 mA IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 − 70 mA IFSM non-repetitive peak forward current tp < 10 ms − 100 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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