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TVR1B ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - EIC discrete Semiconductors

๋ถ€ํ’ˆ๋ช… TVR1B
์ƒ์„ธ๋‚ด์šฉ  FAST RECOVERY RECTIFIER DIODES
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์ œ์กฐ์‚ฌ  EIC [EIC discrete Semiconductors]
ํ™ˆํŽ˜์ด์ง€  http://www.eicsemi.com
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TVR1B ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - EIC discrete Semiconductors

   
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TVR1B/G/J
FAST RECOVERY
RECTIFIER DIODES
PRV : 100 - 600 Volts
Io : 0.5 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
ยฐC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
TVR1B
TVR1G
TVR1J
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
100
400
600
V
Maximum Average Forward Current
IF(AV)
0.5
A
Maximum Peak One Cycle Surge Forward Current
( Non-repetitive )
Maximum Peak Forward Voltage at IF = 0.5 A
VF
1.2
V
Maximum Repetitive Reverse Current at VRRM
IRRM
10
ยตA
Trr(1)
300 (Typ.)
ns
Trr(2)
75
ns
Junction Temperature Range
TJ
- 40 to + 125
ยฐC
Storage Temperature Range
TSTG
- 40 to + 125
ยฐC
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 100 mA, IR = 100 mA.
( 2 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
Page 1 of 2
Rev. 02 : March 25, 2005
RATING
IFSM
10 (50 Hz)
A
Maximum Reverse Recovery Time
Dimensions in inches and ( millimeters )
DO - 41
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
* Pb / RoHS Free


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