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GS820H32T-6I 데이터시트(PDF) 10 Page - GSI Technology |
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GS820H32T-6I 데이터시트(HTML) 10 Page - GSI Technology |
10 / 23 page Rev: 1.03 2/2000 10/23 © 1999, Giga Semiconductor, Inc. Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. D GS820H32T/Q-150/138/133/117/100/66 Note: This parameter is sample tested. Notes: 1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper- ature air flow, board density, and PCB thermal resistance. 2. SCMI G-38-87. 3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1. 4. For x18 configuration, consult factory. Capacitance (TA=25oC, f=1MHZ, VDD=3.3V) Parameter Symbol Test conditions Typ. Max. Unit Control Input Capacitance CI VDD=3.3V 3 4 pF Input Capacitance CIN VIN=0V 4 5 pF Output Capacitance COUT VOUT=0V 6 7 pF Package Thermal Characteristics Rating Layer Board Symbol TQFP Max QFP Max Unit Notes Junction to Ambient (at 200 lfm) single RΘJA 40 TBD °C/W 1,2,4 Junction to Ambient (at 200 lfm) four RΘJA 24 TBD °C/W 1,2,4 Junction to Case (TOP) RΘJC 9 TBD °C/W 3,4 20% tKC VSS-2.0V 50% VSS VIH Undershoot Measurement and Timing Overshoot Measurement and Timing 20% tKC VDD+-2.0V 50% VDD VIL |
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