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GS8180D18D-200 데이터시트(PDF) 1 Page - GSI Technology

부품명 GS8180D18D-200
상세설명  18Mb Burst of 4 SigmaQuad SRAM
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제조업체  GSI [GSI Technology]
홈페이지  http://www.gsitechnology.com
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GS8180D18D-200 데이터시트(HTML) 1 Page - GSI Technology

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Rev: 2.04 4/2005
1/28
© 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8180D18D-250/200/167/133/100
18Mb Burst of 4
SigmaQuad SRAM
250 MHz–100 MHz
1.8 V VDD
1.8 V or 1.5 V I/O
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 4 Read and Write
• 1.8 V +150/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ mode pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• Pin-compatible with future 36Mb, 72Mb, and 144Mb devices
• Pb-Free 165-bump BGA package available
SigmaRAM™ Family Overview
GS8180D18 are built in compliance with the SigmaQuad
SRAM pinout standard for Separate I/O synchronous SRAMs.
They are 18,874,368-bit (18Mb) SRAMs. These are the first in
a family of wide, very low voltage HSTL I/O SRAMs designed
to operate at the speeds needed to implement economical high
performance networking systems.
SigmaQuad SRAMs are offered in a number of configurations.
Some emulate and enhance other synchronous separate I/O
SRAMs. A higher performance SDR (Single Data Rate) Burst
of 2 version is also offered. The logical differences between
the protocols employed by these RAMs hinge mainly on
various combinations of address bursting, output data
registering, and write cueing. Along with the Common I/O
family of SigmaRAMs, the SigmaQuad family of SRAMs
allows a user to implement the interface protocol best suited to
the task at hand.
Clocking and Addressing Schemes
A Burst of 4 SigmaQuad SRAM is a synchronous device. It
employs two input register clock inputs, K and K. K and K are
independent single-ended clock inputs, not differential inputs
to a single differential clock input buffer. The device also
allows the user to manipulate the output register clock inputs
quasi independently with the C and C clock inputs. C and C are
also independent single-ended clock inputs, not differential
inputs. If the C clocks are tied high, the K clocks are routed
internally to fire the output registers instead.
Because Separate I/O Burst of 4 RAMs always transfer data in
four packets, A0 and A1 are internally set to 0 for the first read
Parameter Synopsis
-250
-200
-167
-133
-100
tKHKH
4.0 ns
5.0 ns
6.0 ns
7.5 ns
10 ns
tKHQV
2.1 ns
2.3 ns
2.5 ns
3.0 ns
3.0 ns


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