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GS78108AB-10I 데이터시트(PDF) 6 Page - GSI Technology |
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GS78108AB-10I 데이터시트(HTML) 6 Page - GSI Technology |
6 / 11 page tAA tOH tRC Address Data Out Previous Data Data valid GS78108AB Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Rev: 1.04 5/2006 6/11 © 2003, GSI Technology Read Cycle 1:CE = OE = VIL * These parameters are sampled and are not 100% tested Write Cycle Parameter Symbol -8 -10 -12 Unit Min Max Min Max Min Max Write cycle time tWC 8 — 10 — 12 — ns Address valid to end of write tAW 5.5 — 7 — 8 — ns Chip enable to end of write tCW 5.5 — 7 — 8 — ns Data set up time tDW 4 — 5 — 6 — ns Data hold time tDH 0 — 0 — 0 — ns Write pulse width tWP 5.5 — 7 — 8 — ns Address set up time tAS 0 — 0 — 0 — ns Write recovery time (WE) tWR 0 — 0 — 0 — ns Write recovery time (CE) tWR1 0 — 0 — 0 — ns Output Low Z from end of write tWLZ* 3 — 3 — 3 — ns Write to output in High Z tWHZ* — 3.5 — 4 — 5 ns |
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