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AM42DL16X4D 데이터시트(HTML) 36 Page - SPANSION

부품명 AM42DL16X4D
상세내용  Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
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AM42DL16X4D 데이터시트(HTML) 36 Page - SPANSION

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January 9, 2002
Am42DL16x4D
35
P R E L IMINARY
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC,
V
CC = VCC max
±1.0
µA
I
LIT
RESET# Input Load Current
V
CC = VCC max; RESET# = 12.5 V
35
µA
ILO
Output Leakage Current
VOUT = VSS to VCC,
V
CC = VCC max
±1.0
µA
I
LIA
ACC Input Leakage Current
V
CC = VCC max,
WP#/ACC = VACC max
35
µA
I
CC1f
Flash V
CC Active Read Current
(Notes 1, 2)
CE#f = V
IL, OE# = VIH,
Word Mode
5 MHz
10
16
mA
1 MHz
2
4
ICC2f
Flash VCC Active Write Current
(Notes 2, 3)
CE#f = VIL, OE# = VIH, WE# = VIL
15
30
mA
I
CC3fFlash VCC Standby Current (Note 2)
V
CCf = VCC max, CE#f, RESET#,
WP#/ACC = VCCf ± 0.3 V
0.2
5
µA
I
CC4fFlash VCC Reset Current (Note 2)
V
CCf = VCC max, RESET# = VSS ±
0.3 V, WP#/ACC = V
CCf ± 0.3 V
0.2
5
µA
ICC5f
Flash VCC Current Automatic Sleep
Mode (Notes 2, 4)
VCCf = VCC max, VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
0.2
5
µA
I
CC6f
Flash V
CC Active
Read-While-Program Current (Notes
1, 2)
CE#f = V
IL, OE# = VIH
21
45
mA
I
CC7f
Flash V
CC Active Read-While-Erase
Current (Notes 1, 2)
CE#f = V
IL, OE# = VIH
21
45
mA
I
CC8f
Flash VCC Active
Program-While-Erase-Suspended
Current (Notes 2, 5)
CE#f = V
IL, OE#f = VIH
17
35
mA
IACC
ACC Accelerated Program Current
CE#f = VIL, OE# = VIH
ACC pin
5
10
mA
V
CC pin
15
30
mA
I
CC4sSRAM VCC Standby Current
CE1#s
≥ V
CCs – 0.2V, CE2s ≥
VCCs – 0.2V
10
µA
I
CC5sSRAM VCC Standby Current
CE2s
≤ 0.2V
10
µA
V
IL
Input Low Voltage
–0.2
0.6
V
VIH
Input High Voltage
2.4
VCC + 0.2
V
V
HH
Voltage for WP#/ACC Program
Acceleration and Sector
Protection/Unprotection
8.5
9.5
V
V
ID
Voltage for Sector Protection,
Autoselect and Temporary Sector
Unprotect
8.5
12.5
V
V
OL
Output Low Voltage
IOL = 4.0 mA, VCCf = VCCs =
V
CC min
0.45
V
VOH1
Output High Voltage
I
OH = –2.0 mA, VCCf = VCCs =
VCC min
0.85 x
VCC
V
V
OH2
I
OH = –100 µA, VCC = VCC min
V
CC–0.4


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