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AM42DL16X4D 데이터시트(HTML) 37 Page - SPANSION

부품명 AM42DL16X4D
상세내용  Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
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AM42DL16X4D 데이터시트(HTML) 37 Page - SPANSION

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Am42DL16x4D
January 9, 2002
P R E L IMINARY
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum I
CC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
VLKO
Flash Low VCC Lock-Out Voltage
(Note 5)
2.3
2.5
V
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
VIN = VSS to VCC
–1.0
1.0
µA
I
LO
Output Leakage Current
CE1#s = V
IH, CE2s = VIL or OE# = VIH or
WE# = V
IL, VIO= VSS to VCC
–1.0
1.0
µA
I
CC1s
Average Operating Current
Cycle time = 1 µs, 100% duty,
I
IO = 0 mA, CE1#s ≤ 0.2 V,
CE2
≥ V
CC – 0.2 V, VIN ≤ 0.2 V or VIN
V
CC – 0.2 V
3mA
I
CC2s
Average Operating Current
Cycle time = Min., I
IO = 0 mA, 100% duty,
CE1#s = V
IL, CE2s = VIH, VIN = VIL = or
V
IH
22
mA
VOL
Output Low Voltage
IOL = 2.1 mA
0.4
V
V
OH
Output High Voltage
I
OH = –1.0 mA
2.4
V
ISB1
Standby Current (CMOS)
CE1#s
≥ V
CC – 0.2 V, CE2 ≥ VCC – 0.2 V
(CE1#s controlled) or 0 V
≤ CE2 ≤ 0.2 V
(CE2s controlled), Other input = 0 ~ V
CC
10
µA
DC CHARACTERISTICS (Continued)
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit


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