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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AM42DL16X4D 데이터시트(HTML) 37 Page - SPANSION |
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AM42DL16X4D 데이터시트(HTML) 37 Page - SPANSION |
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36 Am42DL16x4D January 9, 2002 P R E L IMINARY Notes: 1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 2. Maximum I CC specifications are tested with VCC = VCCmax. 3. ICC active while Embedded Erase or Embedded Program is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA. 5. Not 100% tested. VLKO Flash Low VCC Lock-Out Voltage (Note 5) 2.3 2.5 V SRAM DC AND OPERATING CHARACTERISTICS Parameter Symbol Parameter Description Test Conditions Min Typ Max Unit ILI Input Leakage Current VIN = VSS to VCC –1.0 1.0 µA I LO Output Leakage Current CE1#s = V IH, CE2s = VIL or OE# = VIH or WE# = V IL, VIO= VSS to VCC –1.0 1.0 µA I CC1s Average Operating Current Cycle time = 1 µs, 100% duty, I IO = 0 mA, CE1#s ≤ 0.2 V, CE2 ≥ V CC – 0.2 V, VIN ≤ 0.2 V or VIN ≥ V CC – 0.2 V 3mA I CC2s Average Operating Current Cycle time = Min., I IO = 0 mA, 100% duty, CE1#s = V IL, CE2s = VIH, VIN = VIL = or V IH 22 mA VOL Output Low Voltage IOL = 2.1 mA 0.4 V V OH Output High Voltage I OH = –1.0 mA 2.4 V ISB1 Standby Current (CMOS) CE1#s ≥ V CC – 0.2 V, CE2 ≥ VCC – 0.2 V (CE1#s controlled) or 0 V ≤ CE2 ≤ 0.2 V (CE2s controlled), Other input = 0 ~ V CC 10 µA DC CHARACTERISTICS (Continued) CMOS Compatible Parameter Symbol Parameter Description Test Conditions Min Typ Max Unit |
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