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AM42DL16X4D 데이터시트(HTML) 55 Page - SPANSION

부품명 AM42DL16X4D
상세내용  Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
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AM42DL16X4D 데이터시트(HTML) 55 Page - SPANSION

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54
Am42DL16x4D
January 9, 2002
P R E L IMINARY
AC CHARACTERISTICS
SRAM Write Cycle
Notes:
1. WE# controlled.
2. t
CW is measured from CE1#s going low to the end of write.
3. t
WR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. t
AS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The t
WP is measured from the beginning of write
to the end of write.
6. If CE1# goes low (or CE2 goes high) at the same time or after WE# goes low, the outputs will remain at high impedance.
7. If CE1# goes high (or CE2 goes low) at the same time or before WE# goes high, the outputs will remain at high impedance.
8. If OE# is high during the write cycle, the outputs will remain at high impedance.
9. Output data may be present on the bus at this time; input signals should not be applied.
Figure 30.
SRAM Write Cycle—WE# Control
Parameter
Symbol
Description
Speed Options
Unit
70
85
tWC
Write Cycle Time
Min
70
85
ns
t
Cw
Chip Enable to End of Write
Min
60
70
ns
tAS
Address Setup Time
Min
0
ns
t
AW
Address Valid to End of Write
Min
60
70
ns
t
BW
UB#s, LB#s to End of Write
Min
60
70
ns
tWP
Write Pulse Time
Min
50
60
ns
t
WR
Write Recovery Time
Min
0
ns
tWHZ
Write to Output High-Z
Min
0
ns
Max
20
25
t
DW
Data to Write Time Overlap
Min
30
35
ns
tDH
Data Hold from Write Time
Min
0
ns
t
OW
End Write to Output Low-Z
Min
5
ns
Address
CS1#s
UB#s, LB#s
WE#
Data In
Data Out
tWC
tCW
(See Note 2)
tAW
High-Z
High-Z
Data Valid
CS2s
tCW
(See Note 2)
tBW
tWP
(See Note 5)
tAS
(See Note 4)
tWR (See Note 3)
tBW
tDW
tDH
tOW
(See Note 9)
(See Note 9)
(See Note 7)
(See Note 6)


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