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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AM42DL16X4D 데이터시트(HTML) 58 Page - SPANSION |
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AM42DL16X4D 데이터시트(HTML) 58 Page - SPANSION |
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January 9, 2002 Am42DL16x4D 57 P R E L IMINARY FLASH ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 3.0 V V CC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90 °C, V CC = 2.7 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most byteswords program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytewords are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 14 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. FLASH LATCHUP CHARACTERISTICS Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. PACKAGE PIN CAPACITANCE Note: 7.Test conditions T A = 25°C, f = 1.0 MHz. FLASH DATA RETENTION Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.7 15 sec Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 27 sec Byte Program Time 5 150 µs Word Program Time 7 210 µs Excludes system level overhead (Note 5) Accelerated Byte/Word Program Time 4 120 µs Byte Mode 9 27 Chip Program Time (Note 3) Word Mode 6 18 sec Description Min Max Input voltage with respect to V SS on all pins except I/O pins (including OE# and RESET#) –1.0 V 12.5 V Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V V CC Current –100 mA +100 mA Parameter Symbol Description Test Setup Typ Max Unit C IN Input Capacitance V IN = 0 1114pF C OUT Output Capacitance V OUT = 0 1216pF C IN2 Control Pin Capacitance V IN = 0 1416pF C IN3 WP#/ACC Pin Capacitance V IN = 0 1720pF Parameter Description Test Conditions Min Unit Minimum Pattern Data Retention Time 150 °C 10 Years 125 °C 20 Years |
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