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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AM42DL16X4D 데이터시트(HTML) 15 Page - SPANSION |
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AM42DL16X4D 데이터시트(HTML) 15 Page - SPANSION |
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14 Am42DL16x4D January 9, 2002 P R E L IMINARY Standby Mode When the system is not reading or writing to the de- vice, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE#f and RESET# pins are both held at V CC ± 0.3 V. (Note that this is a more restricted voltage range than V IH.) If CE#f and R ESET# are held at VIH , but not within V CC ± 0.3 V, the device will be in the standby mode, but the standby current will be greater. The de- vice requires standard access time (t CE ) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or program- mi ng, the devic e draws active c urr ent until the operation is completed. I CC3 in the DC Characteristics table represents the standby current specification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device en- ergy consumption. The device automatically enables this mode when addresses remain stable for t ACC + 30 ns. The automatic sleep mode is independent of the CE#f, WE#, and OE# control signals. Standard ad- dr es s ac c e s s ti mi ngs pr ov i de new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. I CC4 in the DC Characteristics table represents the automatic sleep mode current specification. RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of re- setting the device to reading array data. When the RESET# pin is driven low for at least a period of t RP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state ma- chine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to en- sure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at V SS ± 0.3 V, the de- vice draws CMOS standby current (I CC4). If RESET# is held at V IL but not within VSS ± 0.3 V, the standby cur- rent will be greater. The RESET# pin may be tied to the system reset cir- cuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firm- ware from the Flash memory. If RESET# is asserted during a program or erase op- eration, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a time of t READY (during Embedded Algorithms). The sy stem can thus mon itor RY /B Y# to de term ine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not ex- ecuting (RY/BY# pin is “1”), the reset operation is completed within a time of t READY (not during Embed- ded Algorithms). The system can read data t RH after the RESET# pin returns to V IH. Refer to the AC Characteristics tables for RESET# pa- rameters and to Figure 15 for the timing diagram. Output Disable Mode When the OE# input is at V IH, output from the device is disabled. The output pins are placed in the high impedance state. Table 3. Device Bank Division Device Part Number Bank 1 Bank 2 Megabits Sector Sizes Megabits Sector Sizes Am29DL161D 0.5 Mbit Eight 8 Kbyte/4 Kword 15.5 Mbit Thirty-one 64 Kbyte/32 Kword Am29DL162D 2 Mbit Eight 8 Kbyte/4 Kword, three 64 Kbyte/32 Kword 14 Mbit Twenty-eight 64 Kbyte/32 Kword Am29DL163D 4 Mbit Eight 8 Kbyte/4 Kword, seven 64 Kbyte/32 Kword 12 Mbit Twenty-four 64 Kbyte/32 Kword Am29DL164D 8 Mbit Eight 8 Kbyte/4 Kword, fifteen 64 Kbyte/32 Kword 8 Mbit Sixteen 64 Kbyte/32 Kword |
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