 |
์ ์๋ถํ ๋ฐ์ดํฐ์ํธ ๊ฒ์์์ง |
|
|
์ ์๋ถํ ๋ฐ์ดํฐ์ํธ ๊ฒ์์์ง |
|
AM42DL16X4D ๋ฐ์ดํฐ์ํธ(HTML) 23 Page - SPANSION |
|
||||||||||||||||||||||||||||||
AM42DL16X4D ๋ฐ์ดํฐ์ํธ(HTML) 23 Page - SPANSION |
|
|
23 / 61 page 
22 Am42DL16x4D January 9, 2002 P R E L IMINARY Table 11. System Interface String Table 12. Device Geometry Definition Addresses (Word Mode) Data Description 1Bh 0027h VCC Min. (write/erase) D7โD4: volt, D3โD0: 100 millivolt 1Ch 0036h V CC Max. (write/erase) D7โD4: volt, D3โD0: 100 millivolt 1Dh 0000h V PP Min. voltage (00h = no VPP pin present) 1Eh 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 0004h Typical timeout per single byte/word write 2 N ยตs 20h 0000h Typical timeout for Min. size buffer write 2 N ยตs (00h = not supported) 21h 000Ah Typical timeout per individual block erase 2 N ms 22h 0000h Typical timeout for full chip erase 2 N ms (00h = not supported) 23h 0005h Max. timeout for byte/word write 2 N times typical 24h 0000h Max. timeout for buffer write 2 N times typical 25h 0004h Max. timeout per individual block erase 2 N times typical 26h 0000h Max. timeout for full chip erase 2 N times typical (00h = not supported) Addresses (Word Mode) Data Description 27h 0016h Device Size = 2 N byte 28h 29h 0002h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 0000h 0000h Max. number of byte in multi-byte write = 2 N (00h = not supported) 2Ch 0002h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 0007h 0000h 0020h 0000h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 003Eh 0000h 0000h 0001h Erase Block Region 2 Information 35h 36h 37h 38h 0000h 0000h 0000h 0000h Erase Block Region 3 Information 39h 3Ah 3Bh 3Ch 0000h 0000h 0000h 0000h Erase Block Region 4 Information |
Korean โผ 
English
Chinese
German
Japanese
Russian
Spanish
French
Italian
Portuguese
Polish
Vietnamese
