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74AHCT1G04GW 데이터시트(PDF) 2 Page - NXP Semiconductors |
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74AHCT1G04GW 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 16 page 2003 Sep 04 2 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. • Low power dissipation • Balanced propagation delays • Very small 5-pin package • Specified from −40 to +85 °C and −40 to +125 °C. DESCRIPTION The 74AHC1G04/74AHCT1G04 are high-speed Si-gate CMOS devices. The 74AHC1G04/74AHCT1G04 provides the inverting buffer. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C; tr =tf ≤ 3.0 ns. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; ∑(CL × VCC2 × fo) = sum of outputs. 2. The condition is VI = GND to VCC. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT 74AHC1G04 74AHCT1G04 tPHL/tPLH propagation delay input A to output Y CL = 15 pF; VCC = 5 V 3.1 3.4 ns CI input capacitance 1.5 1.5 pF CPD power dissipation capacitance CL = 50 pF; f = 1 MHz; notes 1 and 2 15 16 pF |
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