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IKP15N60T 데이터시트(PDF) 2 Page - Infineon Technologies AG

부품명 IKP15N60T
상세설명  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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IKP15N60T
TrenchStop Series
q
Power Semiconductors
2
Rev. 2.1 May 06
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC
1.15
Diode thermal resistance,
junction – case
RthJCD
1.9
Thermal resistance,
junction – ambient
RthJA
62
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V(BR)CES VGE=0V, IC=0.2mA
600
-
-
Collector-emitter saturation voltage
VCE(sat)
VGE = 15V, IC=15A
Tj=25°C
Tj=175°C
-
-
1.5
1.9
2.05
-
Diode forward voltage
VF
VGE=0V, IF=15A
Tj=25°C
Tj=175°C
-
-
1.65
1.6
2.05
-
Gate-emitter threshold voltage
VGE(th)
IC=210µA,VCE=VGE
4.1
4.9
5.7
V
Zero gate voltage collector current
ICES
VCE=600V,
VGE=0V
Tj=25°C
Tj=175°C
-
-
-
-
40
1000
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V, IC=15A
-
8.7
-
S
Integrated gate resistor
RGint
-
Dynamic Characteristic
Input capacitance
Ciss
-
860
-
Output capacitance
Coss
-
55
-
Reverse transfer capacitance
Crss
VCE=25V,
VGE=0V,
f=1MHz
-
24
-
pF
Gate charge
QGate
VCC=480V, IC=15A
VGE=15V
-
87
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
-
7
-
nH
Short circuit collector current
1)
IC(SC)
VGE=15V,tSC≤5µs
VCC = 400V,
Tj ≤ 150°C
-
137.5
-
A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.


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