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Q67050-A4103-A001 데이터시트(PDF) 2 Page - Infineon Technologies AG

부품명 Q67050-A4103-A001
상세설명  IGBT3 Chip
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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SIGC20T120
Edited by INFINEON Technologies AI PS DD HV3, L7631A, Edition 2, 04.09.2003
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tj=25 °C
V CE
1200
V
DC collector current, limited by Tjmax
I C
1 )
A
Pulsed collector current, tp limited by Tjmax
I cpuls
45
A
Gate emitter voltage
V GE
±20
V
Operating junction and storage temperature
Tj, Tstg
-55 ... +150
°C
1 ) depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V , IC= 0.5mA
1200
Collector-emitter saturation voltage
VCE(sat)
VGE=15V, IC=15A
1.4
1.7
2.1
Gate-emitter threshold voltage
VGE(th)
IC=600µA , VGE=VCE
5.0
5.8
6.5
V
Zero gate voltage collector current
ICES
VCE=1200V , VGE=0V
2.16
µA
Gate-emitter leakage current
IGES
VCE=0V , VGE=20V
120
nA
Integrated gate resistor
RGint
--
ELECTRICAL CHARACTERISTICS (tested at component):
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Input capacitance
Ciss
1090
Output capacitance
Coss
58
Reverse transfer capacitance
Crss
V CE=25V,
V GE=0V,
f =1MHz
48
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
1) values also influenced by parasitic L- and C- in measurement and package.
Value
Parameter
Symbol
Conditions
1)
min.
typ.
max.
Unit
Turn-on delay time
t d(on)
90
Rise time
t r
45
Turn-off delay time
t d(off)
520
Fall time
t f
Tj=125 ° C
V CC =600V,
I C =15A,
V GE= - 15/15V,
RG= 75Ω
90
ns


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