SIGC84T120R3L datasheet(2/4 Pages) INFINEON

부품명	SIGC84T120R3L

부품 상세설명	IGBT3 Chip

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제조업체	INFINEON [Infineon Technologies AG]

홈페이지	http://www.infineon.com

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SIGC84T120R3L

Edited by INFINEON Technologies AI PS DD HV3, L7671B, Edition 2, 04.09.03

MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Collector-emitter voltage, Tj=25 °C

V CE

1200

V

DC collector current, limited by Tjmax

I C

1 )

A

Pulsed collector current, tp limited by Tjmax

I cpuls

225

A

Gate emitter voltage

V GE

±20

V

Operating junction and storage temperature

Tj, Tstg

-55 ... +150

°C

1 ) depending on thermal properties of assembly

STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Collector-emitter breakdown voltage

V(BR)CES

VGE=0V , IC= 3 mA

1200

Collector-emitter saturation voltage

VCE(sat)

VGE=15V, IC=75A

1.35

1.65

2.05

Gate-emitter threshold voltage

VGE(th)

IC=3mA , VGE=VCE

5.0

5.8

6.5

V

Zero gate voltage collector current

ICES

VCE=1200V , VGE=0V

10

µA

Gate-emitter leakage current

IGES

VCE=0V , VGE=20V

600

nA

Integrated gate resistor

RGint

10

Ω

ELECTRICAL CHARACTERISTICS (tested at component):

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Input capacitance

Ciss

5345

Output capacitance

Coss

280

Reverse transfer capacitance

Crss

V CE=25V,

V GE=0V,

f =1MHz

242

pF

SWITCHING CHARACTERISTICS (tested at component), Inductive Load

Value

Parameter

Symbol

Conditions

1)

min.

typ.

max.

Unit

Turn-on delay time

t d(on)

0.29

Rise time

t r

0.05

Turn-off delay time

t d(off)

0.52

Fall time

t f

Tj=125 ° C

V CC =600V,

I C =75A,

V GE= - 15/15V,

RG= 4.7Ω

0.09

µs

1) values also influenced by parasitic L- and C- in measurement and package.

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