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SIGC158T120R3L 데이터시트(PDF) 1 Page - Infineon Technologies AG

부품명 SIGC158T120R3L
상세설명  IGBT3 Chip
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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SIGC158T120R3L
Edited by INFINEON Technologies AI PS DD HV3, L7691B, Edition 2, 04.09.03
IGBT
3
Chip
This chip is used for:
power module
FEATURES:
1200V Trench + Field Stop technology
120µm chip
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
Applications:
drives
G
C
E
Chip Type
VCE
ICn
Die Size
Package
Ordering Code
SIGC158T120R3L
1200V 150A
12.56 x 12.56 mm
2
sawn on foil
Q67050-
A4211-A101
MECHANICAL PARAMETER:
Raster size
12.56 x 12.56
Emitter pad size ( include gate pad )
11.04 x 11.04
Gate pad size
1.14 x 1.14
mm
Area total / active
157.8 / 128.1
mm
2
Thickness
120
µm
Wafer size
150
mm
Flat position
90
grd
Max.possible chips per wafer
86 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm AlSiCu
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500µm
Reject Ink Dot Size
∅ 0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C


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