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SPI80N06S-08 데이터시트(PDF) 3 Page - Infineon Technologies AG

부품명 SPI80N06S-08
상세설명  SIPMOS짰 Power-Transistor
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
2)
Input capacitance
C iss
-
3660
-
pF
Output capacitance
C oss
-
1075
-
Reverse transfer capacitance
Crss
-
540
-
Turn-on delay time
t d(on)
-22
-
ns
Rise time
t r
-53
-
Turn-off delay time
t d(off)
-54
-
Fall time
t f
-32
-
Gate Charge Characteristics
2)
Gate to source charge
Q gs
-19
-
nC
Gate to drain charge
Q gd
-62
-
Gate charge total
Q g
-
125
187
Gate plateau voltage
V plateau
-
5.4
-
V
Reverse Diode
2)
Diode continous forward current
I S
-
-
80
A
Diode pulse current
I S,pulse
-
-
320
Diode forward voltage
V SD
V GS=0 V, I F=80 A,
T j=25 °C
-
0.9
1.3
V
Reverse recovery time
t rr
V R=27.5 V, I F=I S,
di F/dt =100 A/µs
-
105
ns
Reverse recovery charge
Q rr
-30
-
nC
Values
V GS=0 V, V DS=25 V,
f =1 MHz
VDD=30 V, ID=80 A,
VGS=10 V, RG=2.4
V DD=44 V, I D=80 A,
V GS=0 to 10 V
1) Current is limited by bondwire; with an R
thJC=0.5 K/W the chip is able to carry 132A at 25°C. For detailed
information see Application Note APPS071E at www.infineon.com/optimos
2) Defined by design not subjected to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
T C=25 °C
Rev. 1.0
page 3
2004-11-30


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