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SPI80N06S-08 데이터시트(PDF) 3 Page - Infineon Technologies AG |
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SPI80N06S-08 데이터시트(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics 2) Input capacitance C iss - 3660 - pF Output capacitance C oss - 1075 - Reverse transfer capacitance Crss - 540 - Turn-on delay time t d(on) -22 - ns Rise time t r -53 - Turn-off delay time t d(off) -54 - Fall time t f -32 - Gate Charge Characteristics 2) Gate to source charge Q gs -19 - nC Gate to drain charge Q gd -62 - Gate charge total Q g - 125 187 Gate plateau voltage V plateau - 5.4 - V Reverse Diode 2) Diode continous forward current I S - - 80 A Diode pulse current I S,pulse - - 320 Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.9 1.3 V Reverse recovery time t rr V R=27.5 V, I F=I S, di F/dt =100 A/µs - 105 ns Reverse recovery charge Q rr -30 - nC Values V GS=0 V, V DS=25 V, f =1 MHz VDD=30 V, ID=80 A, VGS=10 V, RG=2.4 Ω V DD=44 V, I D=80 A, V GS=0 to 10 V 1) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 132A at 25°C. For detailed information see Application Note APPS071E at www.infineon.com/optimos 2) Defined by design not subjected to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. T C=25 °C Rev. 1.0 page 3 2004-11-30 |
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