전자부품 데이터시트 검색엔진 |
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IRL3714Z 데이터시트(PDF) 1 Page - International Rectifier |
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IRL3714Z 데이터시트(HTML) 1 Page - International Rectifier |
1 / 12 page www.irf.com 1 10/8/03 IRL3714Z IRL3714ZS IRL3714ZL HEXFET® Power MOSFET Notes through are on page 12 Applications Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 D2Pak IRL3714ZS TO-220AB IRL3714Z TO-262 IRL3714ZL VDSS RDS(on) max Qg 20V 16m : 4.8nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation W PD @TC = 100°C Maximum Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 4.3 °C/W RθCS Case-to-Sink, Flat Greased Surface e 0.50 ––– RθJA Junction-to-Ambient eà ––– 62 RθJA Junction-to-Ambient (PCB Mount) h ––– 40 35 0.23 18 Max. 36 g 25 g 140 ± 20 20 300 (1.6mm from case) -55 to + 175 |
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