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75V16F64GS16 데이터시트(HTML) 16 Page - Integrated Silicon Solution, Inc

부품명 75V16F64GS16
상세내용  64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
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제조사  ISSI [Integrated Silicon Solution, Inc]
홈페이지  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

75V16F64GS16 데이터시트(HTML) 16 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
75V16F64GS16
ISSI®
FLASH MEMORY COMMAND DEFINITIONS
Notes:
1. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
2. This command is valid during Fast Mode.
3. This command is valid while
RESET = VID
4. The valid address is A6 to A0.
5. This command is valid during Hi-ROM mode.
6. The data “00h” is also acceptable.
Command
Sequence
2
1
3
4
4
Bus
Write
Cycle
Req'd
First Bus
Second Bus
Third Bus
Fourth Bus
Fifth Bus
Sixth Bus
Cycle
Write Cycle
Write Cycle
Read/Write
Cycle
Cycle
Data
Read / Reset (1)
Flash Program (2)
Erase Resume
Data
Data
Addr.
Addr.
Addr.
Addr.
Data
Addr.
Data
Addr.
Data
Read / Reset (1)
SPA
60h
SPA
SPA
55h
F0h
AAh
30h
RA
55h
AAh
F0h
RD
SD
40h
88h
BA
XXXh
30h
A0h
90h
98h
55h
Set to Fast
Mode (2)
Autoselect
Program
Program Suspend
Program Resume
Sector Erase
Erase Suspend
Query (4)
Hi-ROM
Entry
90h
PA
55h
B0h
PD
A0h
3
3
4
1
Extended Sector
Group Protection
(3)
Reset from Flash
Mode (2)
Hi-ROM
Exit (5)
555h
AAh
2AAh
55h
555h
A0h
00h
1
Hi-ROM
Program (5)
Chip Erase
2
3
4
1
1
6
6
1
XXXh
555h
555h
555h
BA
BA
555h
555h
555h
555h
(BA)
55h
AAh
AAh
2AAh
555h
2AAh
(BA)
555h
2AAh
555h
——
AAh
AAh
B0h
2AAh
2AAh
55h
55h
555h
555h
80h
80h
555h
555h
AAh
AAh
2AAh
2AAh
55h
55h
55h
555h
SA
10h
30h
——
BA
B0h
——
60h
555h
AAh
2AAh
55h
555h
20h
XXXh
PA
PD
——
BA
XXXh
(6)
F0H
——
2AAh
2AAh
55h
555h
555h
(HRBA)
90h
XXXh
PD
——
(HRA)
PA


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