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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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75V16F64GS16 데이터시트(HTML) 19 Page - Integrated Silicon Solution, Inc |
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75V16F64GS16 데이터시트(HTML) 19 Page - Integrated Silicon Solution, Inc |
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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 19 PRELIMINARY INFORMATION Rev. 00A 08/01/02 75V16F64GS16 ISSI® DC CHARACTERISTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit ILI Input Leakage VIN=GND to VCCf, VCCr -1.0 — +1.0 µA ILO Output Leakage VOUT=GND to VCCf, VCCr -1.0 — +1.0 µA ILIT RESET Inputs VCCf=VCCf max., — — 35 µA Leakage Current RESET = 12.5V ICC1f FLASH Vcc (1) CEf=VIL, OE=VIH tCycle = 5Mhz — — 18 mA Active Current (Read) tCycle = 1Mhz — — 4 mA ICC2f FLASH Vcc Active(2) CEf=VIL,— — 35 mA Current(Program/Erase) OE=VIH ICC3f FLASH Vcc Active(5) CEf=VIL,— — 53 mA Current OE=VIH (Read-While-Program) ICC4f FLASH Vcc Active(5) CEf=VIL,— — 53 mA Current OE=VIH (Read-While-Erase) ICC5f FLASH Vcc Active CEf=VIL,— — 40 mA Current OE=VIH (Erase-Suspend-Program) IACC WP/ACC Acceleration VCCf = Vcc max, — — 20 mA Program Current WP/ACC = VACC max ICC1r PSRAM Vcc Active VCCr = Vccr max, trc / twc = min — 15 20 mA Current CE1r=VIL, CE2r=VIH, VIN=VIH or VIL, trc / twc = 1 µs — 2.5 3.0 mA IOUT=0 mA ISB1f FLASH Vcc VCCf = Vccf max, CEf= VCCf + 0.3V, — 1 5 µA Standby Current RESET = VCCf + 0.3V, WP/ACC = VCCf + 0.3V ISB2f FLASH Vcc VCCf = Vccf max, RESET= GND + 0.3V, — 1 5 µA Standby Current WP/ACC = VCCf + 0.3V ( RESET) ISB3f FLASH Vcc(3) VCCf = Vcc max., CEf, = GND + 0.3V, — 1 5 µA Current RESET = VCCf + 0.3V, (Automatic Sleep Mode) WP/ACC = VCCf + 0.3V, VIN = VCCf + 0.3V OR GND + 0.3V ISBr PSRAM Vcc Standby VCCr = Vccr max, CE1r = CE2R = VIN, — 0.5 1 mA Current VIN=VIH or VIL, IOUT=0 mA ISB1r PSRAM Vcc Standby VCCr = Vccr max, CE1r ≥ VCCr -0.2V, — — 70 µA Current CE2r ≥ VCCr -0.2V, VIN ≤ 0.2 V or VIN ≥ VCCr -0.2V IOUT=0 mA ISB2r PSRAM Vcc Standby VCCr = Vccr max, CE1r ≥ VCCr -0.2V, — — 5 mA Current(6) CE2r ≥ VCCr -0.2V, VIN Cycle time = tRC min, IOUT = 0 mA |
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