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75V16F64GS16 데이터시트(HTML) 20 Page - Integrated Silicon Solution, Inc

부품명 75V16F64GS16
상세내용  64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
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제조사  ISSI [Integrated Silicon Solution, Inc]
홈페이지  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

75V16F64GS16 데이터시트(HTML) 20 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
75V16F64GS16
ISSI®
DC CHARACTERISTICS (Continued)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
IPDr
PSRAM VCC Power
VCCr = VCCr max.,
10
µA
Down Current
VIN
≥ VCCf - 0.2 V OR VIN ≤ 0.2 V
CE2r
≤ 0.2 V, IOUT = 0 mA
VIL
Input Low Level
-0.3
0.5
V
VIH
Input High Level (Flash)
2.0
VCCf + 0.3
V
VIH
Input High Level (PSRAM)
2.2
VCCr + 0.3
V
VID
Voltage for Autoselect
11.5
12.5
V
and Sector Protection
(
RESET)(4)
VACC
Voltage for
WP/ACC
8.5
9.5
V
Sector Protection/Unprotection
and Program Acceleration (4)
VOL
Output Low Level
VCCr = VCCr min., VCCS=VCCS min.
0.4
V
(PSRAM)
IOL = 1.0 mA
VOH
Output High Level
VCCr = VCCr min., VCCS=VCCS min.
2.2
V
(PSRAM)
IOH = -0.5 mA
VOL
Output Low Level
VCCf = VCCf min., VCCS=VCCS min.
0.45
V
(Flash)
IOL = 4.0 mA
VOH
Output High Level
VCCf = VCCf min., VCCS=VCCS min.
VCCf - 0.4
V
(Flash)
IOH = -0.1 mA
VLKO
Flash Low Vccf
2.3
2.5
V
Lock-Out Voltage
Notes:
1. ICC current listed includes both the DC operating current and the frequency dependent component.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
4. Applicable for only VCCf applying.
5. Embedded Algorithm (program or erase) is in progress. (@5 MHz)
6. ISB2 r depends on VIN cycle time. Please refer to “APPENDIX A”.
.


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