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75V16F64GS16 데이터시트(HTML) 25 Page - Integrated Silicon Solution, Inc

부품명 75V16F64GS16
상세내용  64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
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제조사  ISSI [Integrated Silicon Solution, Inc]
홈페이지  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

75V16F64GS16 데이터시트(HTML) 25 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
25
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
75V16F64GS16
ISSI®
WRITE/ERASE/PROGRAM OPERATIONS
JEDEC
Standard
Parameter
Symbol
Symbol
Min
Typ
Max
Unit
Write Cycle Time
tAVAV
tWC
70
——
ns
Address Setup Time
tAVWL
tAS
0
——
ns
Address Setup Time to
OE Low
tASO
12
——
ns
During Toggle Bit Polling
Address Hold Time
tWLAX
tAH
45
——
ns
Address Hold Time from
CE or
tAHT
0
——
ns
OE High During Toggle Bit Polling
Data Setup Time
tDVWH
tDS
30
——
ns
Data Hold Time
tWHDX
tDH
0
——
ns
Output Enable Hold Time Read
tOEH
0
——
ns
Output Enable Hold Time
tOEH
10
——
ns
Toggle and
Data Polling
CE High During Toggle Bit Polling
tCEPH
20
——
ns
OE High During Toggle Bit Polling
tOEPH
20
——
ns
Read Recover Time Before Write (
OE to CE)tGHWL
tGHWL
0
——
ns
Read Recover Time Before Write (
OE to WE)tGHEL
tGHEL
0
——
ns
WE Setup Time (CEf to WE)
tELWL
tWS
0
——
ns
CE Setup Time (WE to CE)
tWLEL
tCS
0
——
ns
WE Hold Time (CE to WE)
tWHEH
tWH
0
——
ns
CE Hold Time (WE to CE)
tEHWH
tCH
0
——
ns
Write Pulse Width
tWLWH
tWPH
35
——
ns
CEf Pulse Width
tELEH
tCP
35
——
ns
Write Pulse Width High
tWHWL
tWPH
25
——
ns
CE Pulse Width High
tEHEL
tCPH
25
——
ns
Programming Operation
tWHWH1tWHWH1
10
µs
Sector Erase Operation (1)
tWHWH2tWHWH2
0.2
s
VCC Setup Time
tVCS
50
——
µs
Rise Time to VID (2)
tVIDR
500
——
ns
Rise Time to VID (3)
tVACCR
500
——
ns
Voltage Transition Time (2)
tVLHT
4
——
µs
Write Pulse width (2)
tWPP
100
——
µs


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