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75V16F64GS16 데이터시트(HTML) 27 Page - Integrated Silicon Solution, Inc

부품명 75V16F64GS16
상세내용  64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
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제조사  ISSI [Integrated Silicon Solution, Inc]
홈페이지  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

75V16F64GS16 데이터시트(HTML) 27 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
27
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
75V16F64GS16
ISSI®
FLASH WRITE CYCLE
(
WE CONTROL)
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3.
DQ7 is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence.
Address
DQ
CEf
OE
WE
A0h
DQ7
Dout
PA
555h
PA
Data Polling
PD
Dout
tAS
3rd Bus Cycle
tAH
tRC
tOE
tCE
tOH
tDF
tDS
tDH
tWHWH1
tCS
tCH
tGHWL
tWP
tWPH
tWC


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