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75V16F64GS16 데이터시트(HTML) 37 Page - Integrated Silicon Solution, Inc

부품명 75V16F64GS16
상세내용  64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
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제조사  ISSI [Integrated Silicon Solution, Inc]
홈페이지  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

75V16F64GS16 데이터시트(HTML) 37 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
37
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
75V16F64GS16
ISSI®
PSRAM POWER DOWN PARAMETER
Value
Parameter
Symbol
Min.
Max.
Unit
CE2r Low Setup Time for Power down Entry
tCSP
10
ns
CE2r Low Setup Time after Power down Entry
tC2LP
100
ns
CE1r High Hold Time Following CE2r High after Power down Exit
tCHH
350
µs
CE1r High Setup Time Following CE2r High after Power down Exit
tCHS
10
ns
PSRAM OTHER TIMING PARAMETERS
Value
Parameter
Symbol
Min.
Max.
Unit
CE1r High to OE Invalid for Standby Entry
tCHOX
20
ns
CE1r High to WE Invalid for Standby Entry(1)
tCHWX
20
ns
CE2r Low Hold Time after Power-up(2)
tC2LH
50
µs
CE2r High Hold Time after Power-up(3)
tC2HL
50
µs
CE1r High Hold Time Following CE2r High after Power-up(2)
tCHH
350
µs
Input Transition Time(4)
tT
125
ns
Notes:
1. Unintended data may be written into any address location if tCHWX is not satisfied.
2. Must satisfy tCHH (Min) after tC2LH (Min) .
3. Requires Power Down mode entry and exit after tC2HL.
4. Input Transition Time (tT) at AC testing is 5 ns as shown below. If actual tT is longer than 5 ns,
it may violate some timing parameters of AC specification.
PSRAM AC TEST CONDITIONS
Parameter
Symbol
Conditon
Value
Unit
Input HIgh Level
VIH
VCCr = 2.7V to 3.1V
2.3
V
Input Low Level
VIL
VCCr = 2.7V to 3.1V
0.4
V
Input Timing Measurement Level
VREF
VCCr = 2.7V to 3.1V
1.3
V
Input Transition Time
tT
Between VIL and VIH
5ns


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