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전자부품 데이터시트 검색엔진 |
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75V16F64GS16 데이터시트(HTML) 42 Page - Integrated Silicon Solution, Inc |
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75V16F64GS16 데이터시트(HTML) 42 Page - Integrated Silicon Solution, Inc |
42 / 50 page ![]() 42 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 PRELIMINARY INFORMATION Rev. 00A 08/01/02 75V16F64GS16 ISSI® PSRAM READ / WRITE TIMING ( CE1r Control) PSRAM READ / WRITE TIMING (READ = OE Control, WRITE = WE Control) Address CE1r DQ OE Write Data Input tOEH tWH tCHZ tWRC (Min) Write Address tWS tCE tWRC tCP tASC WE UB, LB tBH tAS tRC Read Address tCLz tOHCL tOH Read Data Output tOH tWH tWS tCHAH tBS Note: CE2r must be High during write cycle. Address CE1r DQ tWC OE Write Data Input tOHZ tOES tBS Write Address tDS tDH tWP tWR tASO tBH WE UB, LB tOHAH tAS tAH Read Address tOEH tOLz tOH Read Data Output Low Note: CE1r can be tied to Low for WE and OE controlled operation. When CE1r is tied to Low, output is exclusively controlled by OE. |