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75V16F64GS16 데이터시트(HTML) 48 Page - Integrated Silicon Solution, Inc

부품명 75V16F64GS16
상세내용  64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
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제조사  ISSI [Integrated Silicon Solution, Inc]
홈페이지  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

75V16F64GS16 데이터시트(HTML) 48 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
75V16F64GS16
ISSI®
PSRAM DATA RETENTION SWITCHING CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
Max.
Unit
CIN
Input Capacitance
VIN
= 0 V
11
14
pF
COUT
Output Capacitance
VOUT
= 0 V
12
16
pF
CIN2
Control Pin Capacitance
VIN
= 0 V
14
16
pF
CIN3
WP/ACC Pin Capacitance
VIN
= 0 V
21.5
26
pF
Notes:
1. Test conditions TA = +25 °C, f = 1.0 MHz
ISB2r VS VIN Cycle Time
HANDLING OF PACKAGE:
Please handle this package carefully since the sides of package created with acute angles.
CAUTION:
1) The high voltage (VID) cannot be applied to address pins and control pins except RESET. Exception is when
autoselect and sector group protection function are used. Then the high voltage (VID) can be applied to RESET.
2) Without the high voltage (VID) , sector group protection can be achieved by using “Extended Sector Group
Protection” command.
2.5
2.0
1.5
1.0
0.5
0.0
0
200
400
600
800
1000
VIN Cycle Time (ns)
ISB2r vs. VIN Cycle Time (VCCr = 3.0 V)
: RT = 25 °C
: LT = -30 °C
: HT = 85 °C


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