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FY4AEJ-03 데이터시트(PDF) 4 Page - Renesas Technology Corp

부품명 FY4AEJ-03
부품 상세설명  HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

FY4AEJ-03 데이터시트(HTML) 4 Page - Renesas Technology Corp

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PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are subject
to change.
Aug. 1999
MITSUBISHI POWER MOSFET
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
0
20
40
60
80
100
10–1
101
2
100
35 7
2
102
35 7
23
5 7
VGS = 4V
Tc = 25
°C
Pulse Test
10V
0
0.2
0.4
0.6
0.8
1.0
02468
10
Tc = 25
°C
Pulse Test
ID = 8A
4A
2A
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1.0
4V
3V
VGS =10V,8V,6V,5V
PD = 1.6W
Tc = 25
°C
Pulse Test
0
2
4
6
8
10
0
0.1
0.2
0.3
0.4
0.5
VGS = 10V,8V,6V,5V
4V
PD = 1.6W
3V
3
2
3
5
5
7
7
2
100
35 7
2
101
35 7
2 35
100
2
3
5
7
101
2
3
5
10–1
tw = 10
µs
TC = 25
°C
Single Pulse
100
µs
100ms
10ms
1ms
DC
0
0.4
0.8
1.2
1.6
2.0
0
200
50
100
150
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (
°C)
PERFORMANCE CURVES (N-ch)


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