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FY4AEJ-03 데이터시트(PDF) 5 Page - Renesas Technology Corp

부품명 FY4AEJ-03
부품 상세설명  HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

FY4AEJ-03 데이터시트(HTML) 5 Page - Renesas Technology Corp

  FY4AEJ-03 Datasheet HTML 1Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 2Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 3Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 4Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 5Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 6Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 7Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 8Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 9Page - Renesas Technology Corp  
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PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are subject
to change.
Aug. 1999
100
101
23
5 7
102
23
5 7
100
101
2
3
5
7
102
2
3
5
7
TC = 25
°C,75°C,125°C
VDS =10V
Pulse Test
0
4
8
12
16
20
02468
10
Tc = 25
°C
VDS = 10V
Pulse Test
10–1
2
100
35 7
2
101
35 7
2
2
3
3
5
5
7
7
102
103
2
2
Ciss
Coss
Crss
Tch = 25
°C
VGS = 0V
f = 1MHZ
10–1
100
23
5
7
101
23
5
7
101
100
2
3
7
5
2
102
7
2
3
5
td(off)
td(on)
tr
Tch = 25
°C
VGS = 10V
VDD = 15V
RGEN = RGS = 50
tf
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
125
°C
TC =
75
°C
25
°C
VGS = 0V
Pulse Test
0
2
4
6
8
10
0
4
8
12
16
20
15V
VDS =
20V
25V
Tch = 25
°C
ID =4A
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
SOURCE-DRAIN VOLTAGE VSD (V)
GATE CHARGE Qg (nC)
MITSUBISHI POWER MOSFET
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET


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