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FY4AEJ-03 데이터시트(PDF) 6 Page - Renesas Technology Corp

부품명 FY4AEJ-03
부품 상세설명  HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

FY4AEJ-03 데이터시트(HTML) 6 Page - Renesas Technology Corp

  FY4AEJ-03 Datasheet HTML 1Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 2Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 3Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 4Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 5Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 6Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 7Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 8Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 9Page - Renesas Technology Corp  
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PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are subject
to change.
Aug. 1999
10–1
100
2
3
5
7
101
2
3
5
7
102
2
3
5
7
10–4 23 5 7
2 3 5 7
2 3 57
2 3 5 7
100 23 5 7101 23 5 7102 23 5 7103
10–3
10–2
10–1
D = 1.0
0.5
0.2
0.1
0.05
0.01
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
PULSE WIDTH tw (s)
0.4
0.6
0.8
1.0
1.2
1.4
–50
0
50
100
150
VGS = 0V
ID = 1mA
Pulse Test
Single Pulse
CHANNEL TEMPERATURE Tch (
°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
0
0.8
1.6
2.4
3.2
4.0
–50
0
50
100
150
VDS = 10V
ID = 1mA
Pulse Test
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
CHANNEL TEMPERATURE Tch (
°C)
10–1
100
2
3
5
7
101
2
3
5
7
–50
0
50
100
150
VGS = 10V
ID = 4A
Pulse Test
CHANNEL TEMPERATURE Tch (
°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PDM
tw
D
=
T
tw
T
0.02
MITSUBISHI POWER MOSFET
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET


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