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FY4AEJ-03 데이터시트(PDF) 2 Page - Renesas Technology Corp

부품명 FY4AEJ-03
부품 상세설명  HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

FY4AEJ-03 데이터시트(HTML) 2 Page - Renesas Technology Corp

  FY4AEJ-03 Datasheet HTML 1Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 2Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 3Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 4Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 5Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 6Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 7Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 8Page - Renesas Technology Corp FY4AEJ-03 Datasheet HTML 9Page - Renesas Technology Corp  
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PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are subject
to change.
Aug. 1999
5.0
0.4
1.27
1.8 MAX.
ŒŽ

‘’“
SOURCE
GATE
DRAIN
Ž

Œ

“

‘
Œ

’“
V
V
A
A
A
A
A
W
°C
°C
g
FY4AEJ-03
n-ch
30
±20
4
28
4
1.7
6.8
1.6
p-ch
–30
±20
–4
–28
–4
–1.7
–6.8
1.6
–55~+150
–55~+150
0.07
4V DRIVE
VDSS ...............................................................................
±30V
rDS (ON) (MAX) ........................................................ 30/80m
ID .........................................................................................
±4A
MITSUBISHI POWER MOSFET
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
APPLICATION
Motor control, Lamp control, Solenoid control,
DC-DC converter, Li-ionbattery, notebook p/c, etc
SOP-8
OUTLINE DRAWING
Dimensions in mm
VGS = 0V
VDS = 0V
L = 10
µH
Typical value
Parameter
Conditions
Symbol
Ratings
Unit
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
MAXIMUM RATINGS (Tc = 25°C)
q
q
q
q


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