The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such

information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices

does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.

303 S. Technology Court,

Phone: (800) SMI-MMIC

http://www.sirenza.com

Broomfield, CO 80021

1

EDS-104292 Rev C

Sirenza Microdevices’ SLD2000 is a robust 12 Watt, high performance

LDMOS transistor die, designed for operation from 10 to 2700MHz. It

is an excellent solution for applications requiring high linearity and effi-

ciency. The SLD2000 is typically used as a driver or output stage for

power amplifier, or transmitter applications. These robust power tran-

process.

RF Specifications

Symbol

Parameter

Unit

Min

Typ

Max

Frequency

Frequency of Operation

MHz

10

-

2700

Gain

10 Watt CW, 902 - 928MHz

dB

-

19

-

Efficiency

Drain Efficiency at 10 Watt CW, 915MHz

%

-

47

-

Linearity

dBc

-

-32

-

Linearity

-

12

-

Thermal Resistance (Junction-to-Case, mounted in package)

ºC/W

-

4

-

Functional Schematic Diagram

SLD-2000

12 Watt Discrete LDMOS FET -Bare Die

Product Features

Applications

1dB

Product Description

Drain

Manifold

Gate

Manifold

Source - Backside Contact

ESD

Protection

T

DC Specifications

Symbol

Parameter

Unit

Min

Typical

Max

mA / V

590

V

3.0

3.8

5.0

V

65

70

pF

27.5

pF

0.8

pF

14.7

R

0.6

0.75