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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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FW332 데이터시트(PDF) 2 Page - Sanyo Semicon Device |
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FW332 데이터시트(HTML) 2 Page - Sanyo Semicon Device |
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2 / 5 page  FW332 No.7134-2/6 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit RDS(on)1 ID=4A, VGS=10V 55 70 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=2A, VGS=4V 105 145 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 270 pF Output Capacitance Coss VDS=10V, f=1MHz 90 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 55 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns Rise Time tr See specified Test Circuit. 80 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 25 ns Fall Time tf See specified Test Circuit. 17 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=4A 7.0 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4A 1.3 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4A 1.5 nC Diode Forward Voltage VSD IS=4A, VGS=0 0.84 1.2 V [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --30 V Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0 --1 µA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V Forward Transfer Admittance yfs VDS=--10V, ID=--3A 2.9 4.2 S RDS(on)1 ID=--3A, VGS=--10V 90 115 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=--1.5A, VGS=--4V 160 225 m Ω Input Capacitance Ciss VDS=--10V, f=1MHz 370 pF Output Capacitance Coss VDS=--10V, f=1MHz 100 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 65 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns Rise Time tr See specified Test Circuit. 45 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 30 ns Fall Time tf See specified Test Circuit. 31 ns Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 8.6 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 1.2 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 1.8 nC Diode Forward Voltage VSD IS=--3A, VGS=0 --0.85 --1.5 V Electrical Connection Switching Time Test Circuit [N-channel] [P-channel] PW=10 µs D.C. ≤1% 10V 0V VIN P.G 50 Ω G S FW332 ID=4A RL=3.75Ω VDD=15V VOUT VIN D PW=10 µs D.C. ≤1% 0V --10V VIN P.G 50 Ω G S FW332 ID= --3A RL=5Ω VDD= --15V VOUT VIN D D1 D1 D2 D2 S1 G1 S2 G2 (Top view) |
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