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STP80NF10 데이터시트(PDF) 3 Page - STMicroelectronics |
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3 / 14 page STP80NF10 - STB80NF10 Electrical ratings 3/14 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VGS Gate- source voltage ±20 V ID (1) 1. Limited by package Drain current (continuous) at TC = 25°C 80 A ID (1) Drain current (continuous) at TC = 100°C 80 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25°C 300 W Derating factor 2 W/°C dv/dt (3) 3. ISD < 80A, di/dt < 300A/µs, VDD= 80 % V(BR)DSS Peak diode recovery voltage slope 7 V/ns EAS (4) 4. Starting Tj = 25°C, ID = 80A, VDD = 50V Single pulse avalanche energy 350 mJ Tstg Tj Storage temperature Operating junction temperature -55 to 175 °C Table 2. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case Max 0.5 °C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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