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BF1108 데이터시트(PDF) 4 Page - NXP Semiconductors

부품명 BF1108
상세설명  Silicon RF switches
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF1108 데이터시트(HTML) 4 Page - NXP Semiconductors

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1999 Nov 18
4
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
DYNAMIC CHARACTERISTICS
Common cathode; Tamb =25 °C.
Notes
1. IF = diode forward current.
2. Cic is the series connection of Csg and Cgc; Coc is the series connection of Cdg and Cgc.
3. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
FET and diode
s21(on)2 losses (on-state)
VSC =VDC = 0; RS =RL =50 Ω;
IF = 0; note 1; f ≤ 1 GHz
−−
2dB
VSC =VDC = 0; RS =RL =50 Ω; IF =0;
f = 1 GHz
1.3
dB
VSC =VDC = 0; RS =RL =75 Ω; IF =0;
f
≤ 1 GHz
−−
3dB
s21(off)2 isolation (off-state)
VSC =VDC =5V; RS =RL =50 Ω;
IF = 1 mA; f ≤ 1 GHz
30
−−
dB
VSC =VDC =5V; RS =RL =50 Ω;
IF = 1 mA; f = 1 GHz
38
dB
VSC =VDC =5V; RS =RL =75 Ω;
IF = 1 mA; f ≤ 1 GHz
30
−−
dB
RDSon
drain-source on-resistance VCS = 0; ID =1mA
12
20
Cic
input capacitance; note 2
VSC =VDC =5V; IF = 1 mA; f = 1 MHz
1
pF
VSC =VDC = 0; IF = 0; f = 1 MHz
0.65
0.9
pF
Coc
output capacitance; note 2
VSC =VDC =5V; IF = 1 mA; f = 1 MHz
1
pF
VSC =VDC = 0; IF = 0; f = 1 MHz
0.65
0.9
pF
Diode
Cd
diode capacitance
f = 1 MHz; VR =0
1.1
pF
rD
diode forward resistance
IF = 2 mA; f = 100 MHz; note 3
−−
0.7
handbook, halfpage
MBL027
ds
s
SOT143B
SOT143R
d
g, a
c
c
g, a
Fig.3 Simplified diagram.


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