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BF1202WR 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BF1202WR 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 16 page 2000 Mar 29 2 Philips Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS • VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. PINNING PIN DESCRIPTION 1 source 2 drain 3 gate 2 4 gate 1 handbook, 2 columns Top view MSB014 12 3 4 Fig.1 Simplified outline (SOT143B). BF1202 marking code: LDp handbook, 2 columns Top view MSB035 1 2 4 3 Fig.2 Simplified outline (SOT143R). BF1202R marking code: LEp page Top view MSB842 21 4 3 Fig.3 Simplified outline (SOT343R). BF1202WR marking code: LE QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 10 V ID drain current −− 30 mA Ptot total power dissipation −− 200 mW y fs forward transfer admittance 25 30 40 mS Cig1-ss input capacitance at gate 1 − 1.7 2.2 pF Crss reverse transfer capacitance f = 1 MHz − 15 30 fF F noise figure f = 800 MHz − 1.1 1.8 dB Xmod cross-modulation input level for k = 1% at 40 dB AGC 100 105 − dB µV Tj operating junction temperature −− 150 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. |
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