BF246C datasheet(3/5 Pages) PHILIPS

부품명	BF246C

상세설명	N-channel silicon junction field-effect transistors

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제조업체	PHILIPS [NXP Semiconductors]

홈페이지	http://www.nxp.com

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3 / 5 page

1996 Jul 29

3

Philips Semiconductors

Product speciﬁcation

N-channel silicon junction

ﬁeld-effect transistors

BF246A; BF246B; BF246C;

BF247A; BF247B; BF247C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

STATIC CHARACTERISTICS

Tamb =25 °C; unless otherwise specified.

Note

1. Measured under pulse conditions: tp = 300 µs; δ≤ 0.02.

DYNAMIC CHARACTERISTICS

Tamb =25 °C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−±25

V

IG

gate current

−

10

mA

Ptot

total power dissipation

up to Tamb =50 °C

−

400

mW

Tstg

storage temperature

−65

+150

°C

Tj

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)GSS

gate-source breakdown voltage

IG = −1 µA; VDS =0

−25

−−

V

VGSoff

gate-source cut-off voltage

ID = 10 nA; VDS =15V

−0.6

−−14.5

V

VGS

gate-source voltage

ID = 200 µA; VDS =15V

BF246A; BF247A

−1.5

−−4.0

V

BF246B; BF247B

−3.0

−−7.0

V

BF246C; BF247C

−5.5

−−12.0

V

IDSS

drain current

VGS = 0; VDS = 15 V; note 1

BF246A; BF247A

30

−

80

mA

BF246B; BF247B

60

−

140

mA

BF246C; BF247C

110

−

250

mA

IGSS

gate leakage current

VGS = −15 V; VDS =0

−−−5nA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Cis

input capacitance

ID = 10 mA; f = 1 MHz; VDS =15V

−

11

−

pF

Crs

reverse transfer capacitance

ID = 10 mA; f = 1 MHz; VDS =15V

−

3.5

−

pF

Cos

output capacitance

ID = 10 mA; f = 1 MHz; VDS =15V

−

5

−

pF

y

fs

forward transfer admittance

ID = 10 mA; f = 1 kHz; VDS =15V

8

17

−

mS

fgfs

cut-off frequency

gfs = 0.7 of its value at 1 kHz; VGS =0

−

450

−

MHz

유사한 부품 번호 - BF246C

제조업체	부품명	데이터시트	상세설명
Siemens Semiconductor G...	BF246C	127Kb / 6P	N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
List of Unclassifed Man...	BF246C	213Kb / 4P	PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

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유사한 설명 - BF246C

제조업체	부품명	데이터시트	상세설명
NXP Semiconductors	BF545A	100Kb / 12P	N-channel silicon junction field-effect transistors 1996 Jul 29
NXP Semiconductors	BF556A	100Kb / 11P	N-channel silicon junction field-effect transistors 1996 Jul 29
Micro Electronics	J111	45Kb / 1P	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS
InterFET Corporation	SMP5462	213Kb / 10P	N-Channel Silicon Junction Field-Effect Transistors
New Jersey Semi-Conduct...	2N5457	113Kb / 1P	SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
	2N5398	162Kb / 1P	N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
	2N4117	173Kb / 1P	N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
Siemens Semiconductor G...	BF246A	127Kb / 6P	N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
Micro Electronics	2N5484	150Kb / 1P	N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS
Siemens Semiconductor G...	BF245A	178Kb / 7P	N-Channel junction field-Effect Transistors

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BF246C 데이터시트(PDF) 3 Page - NXP Semiconductors

BF246C 데이터시트(HTML) 3 Page - NXP Semiconductors

유사한 부품 번호 - BF246C

유사한 설명 - BF246C

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