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BF246C 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BF246C 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 5 page 1996 Jul 29 3 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF246A; BF246B; BF246C; BF247A; BF247B; BF247C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS STATIC CHARACTERISTICS Tamb =25 °C; unless otherwise specified. Note 1. Measured under pulse conditions: tp = 300 µs; δ≤ 0.02. DYNAMIC CHARACTERISTICS Tamb =25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage −±25 V IG gate current − 10 mA Ptot total power dissipation up to Tamb =50 °C − 400 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 250 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS =0 −25 −− V VGSoff gate-source cut-off voltage ID = 10 nA; VDS =15V −0.6 −−14.5 V VGS gate-source voltage ID = 200 µA; VDS =15V BF246A; BF247A −1.5 −−4.0 V BF246B; BF247B −3.0 −−7.0 V BF246C; BF247C −5.5 −−12.0 V IDSS drain current VGS = 0; VDS = 15 V; note 1 BF246A; BF247A 30 − 80 mA BF246B; BF247B 60 − 140 mA BF246C; BF247C 110 − 250 mA IGSS gate leakage current VGS = −15 V; VDS =0 −−−5nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cis input capacitance ID = 10 mA; f = 1 MHz; VDS =15V − 11 − pF Crs reverse transfer capacitance ID = 10 mA; f = 1 MHz; VDS =15V − 3.5 − pF Cos output capacitance ID = 10 mA; f = 1 MHz; VDS =15V − 5 − pF y fs forward transfer admittance ID = 10 mA; f = 1 kHz; VDS =15V 8 17 − mS fgfs cut-off frequency gfs = 0.7 of its value at 1 kHz; VGS =0 − 450 − MHz |
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