전자부품 데이터시트 검색엔진 |
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BF909WR 데이터시트(PDF) 9 Page - NXP Semiconductors |
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BF909WR 데이터시트(HTML) 9 Page - NXP Semiconductors |
9 / 12 page 1997 Sep 05 9 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb =25 °C Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb =25 °C f (MHz) s11 s21 s12 s22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 50 0.985 −6.4 4.064 172.3 0.001 86.9 0.985 −3.2 100 0.978 −12.6 3.997 164.9 0.002 82.7 0.982 −6.4 200 0.957 −25.0 3.886 150.8 0.005 74.3 0.973 −12.6 300 0.931 −36.5 3.682 137.3 0.006 68.9 0.960 −18.6 400 0.899 −47.6 3.484 123.8 0.007 59.6 0.947 −24.2 500 0.868 −57.4 3.260 111.7 0.007 57.9 0.936 −29.6 600 0.848 −66.6 3.053 101.0 0.006 58.5 0.927 −34.8 700 0.816 −74.6 2.829 90.3 0.005 65.5 0.919 −39.8 800 0.792 −82.2 2.652 79.9 0.005 83.3 0.913 −44.6 900 0.772 −89.3 2.470 69.5 0.005 114.9 0.910 −49.5 1000 0.754 −95.6 2.328 59.5 0.006 138.7 0.909 −54.6 f (MHz) Fmin (dB) Γopt rn (ratio) (deg) 800 2.00 0.603 67.71 0.581 |
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