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TPD4112K 데이터시트(PDF) 11 Page - Toshiba Semiconductor

부품명 TPD4112K
상세설명  Intelligent Power Device High Voltage Monolithic Silicon Power IC
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD4112K 데이터시트(HTML) 11 Page - Toshiba Semiconductor

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TPD4112K
2005-11-04
11
by making Duty of PWM less than 100%, or turning a motor from the outside compulsorily, and
creating edge to a hall sensor output. In order to enable the reboot after a lock as a system, it is
necessary to restrict and obtain on motor specification so that the maximum of Duty may become less
than 100%.
Description of Protection Function
(1)
Over current protection
The IC incorporates the over current protection circuit to protect itself against over current at startup
or when a motor is locked. This protection function detects voltage generated in the current detection
resistor connected to the IS pin. When this voltage exceeds VR = 0.5 V (typ.), the high-side IGBT
output, which is on, temporarily shuts down after a mask period, preventing any additional current
from flowing to the IC. The next PWM ON signal releases the shutdown state.
(2)
Under voltage protection
The IC incorporates the under voltage protection circuit to prevent the IGBT from operating in
unsaturated mode when the VCC voltage or the VBS voltage drops.
When the VCC power supply falls to the IC internal setting (VCCUVD = 11 V typ.), all IGBT outputs
shut down regardless of the input. This protection function has hysteresis. When the VCCUVR (= 11.5
V typ.) reaches 0.5 V higher than the shutdown voltage, the IC is automatically restored and the
IGBT is turned on again by the input.
When the VBS supply voltage drops (VBSUVD = 10 V typ.), the high-side IGBT output shuts down.
When the VBSUVR (= 10.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IGBT is
turned on again by the input signal.
(3)
Thermal shutdown
The IC incorporates the thermal shutdown circuit to protect itself against the abnormal state when
its temperature rises excessively.
When the temperature of this chip rises due to external causes or internal heat generation and the
internal setting TSD, all IGBT outputs shut down regardless of the input. This protection function
has hysteresis (
∆TSD = 50°C typ.). When the chip temperature falls to TSD − ∆TSD, the chip is
automatically restored and the IGBT is turned on again by the input.
Because the chip contains just one temperature detection location, when the chip heats up due to the
IGBT, for example, the differences in distance from the detection location in the IGBT (the source of
the heat) cause differences in the time taken for shutdown to occur. Therefore, the temperature of the
chip may rise higher than the thermal shutdown temperature when the circuit started to operate.
Duty ON
Over current setting value
PWM reference voltage
Duty OFF
tOFF
tON
tON
Mask period
+ tOFF
Over current shutdown
Retry
Triangle wave
Output current


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