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AD5259 데이터시트(PDF) 3 Page - Analog Devices

부품명 AD5259
상세설명  Nonvolatile, I2C-Compatible 256-Position, Digital Potentiometer
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AD5259 데이터시트(HTML) 3 Page - Analog Devices

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AD5259
Preliminary Technical Data
Rev. PrJ 7/22/04 | Page 3 of 14
ELECTRICAL CHARACTERISTICS—5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ VERSIONS
(VDD = 5 V ± 10%, or 3 V ± 10%; VA = VDD; VB = 0 V; –40°C < TA < +85°C; unless otherwise noted.)
Table 1.
Parameter
Symbol
Conditions
Min
Max
Unit
DC CHARACTERISTICS—RHEOSTAT MODE
Resistor Differential Nonlinearity
R-DNL
RWB, VA = no connect
–1
±0.1
+1
LSB
Resistor Integral Nonlinearity
R-INL
RWB, VA = no connect
–2
±0.25
+2
LSB
Nominal Resistor Tolerance
∆RAB
TA = 25°C
–30
+30
%
Resistance Temperature Coefficient
∆RAB/∆T
VAB = VDD,
Wiper = no connect
650
ppm/°C
RWB
RWB
Code = 0x00
50
120
DC CHARACTERISTICS—POTENTIOMETER DIVIDER MODE
Differential Nonlinearity
DNL
–1
±0.1
+1
LSB
Integral Nonlinearity
INL
–1
±0.3
+1
LSB
Voltage Divider Temperature Coefficient
∆VW/∆T
Code = 0x80
30
ppm/°C
Full-Scale Error
VWFSE
Code = 0xFF
–3
–1
0
LSB
Zero-Scale Error
VWZSE
Code = 0x00
0
1
3
LSB
RESISTOR TERMINALS
Voltage Range
VA,B,W
VSS
VDD
V
Capacitance A, B
CA,B
f = 1 MHz, measured to
GND, Code = 0x80
45
pF
Capacitance W
CW
f = 1 MHz, measured to
GND, Code = 0x80
60
pF
Common-Mode Leakage
ICM
VA = VB = VDD/2
1
nA
DIGITAL INPUTS AND OUTPUTS
Input Logic High
VIH
0.7 × VL
VL+0.5
V
Input Logic Low
VIL
–0.5
0.3×VL
V
Input Current
IIL
VIN = 0 V or 5 V
±1
µA
Input Capacitance
CIL
5
pF
POWER SUPPLIES
Power Supply Range
VDD
2.7
5.5
V
Positive Supply Current
IDD
VIH = 5 V or VIL = 0 V
1
µA
Logic Supply(must match logic levels)
VLOGIC
2.7
VDD
Programming Mode Current(EEMEM)
ILOGIC(PROG)
VIH = 5 V or VIL = 0 V
35
mA
Power Dissipation
PDISS
VIH = 5 V or VIL = 0 V,
VDD = 5 V
18
50
µW
Power Supply Sensitivity
PSS
VDD = +5 V ± 10%,
Code = Midscale
±0.02
±0.05
%/%
DYNAMIC CHARACTERISTICS
Bandwidth –3dB
BW
RAB = 5kΩ/ 10 kΩ/50 kΩ/100
kΩ, Code = 0x80
2000/600/
100/40
kHz
Total Harmonic Distortion
THDW
VA =1 V rms, VB = 0 V,
f = 1 kHz, RAB = 10 kΩ
0.1
%
VW Settling Time (1kΩ/10 kΩ/50 kΩ/100 kΩ)
tS
VA = 5 V, VB = 0 V,
±1 LSB error band
2
µs
Resistor Noise Voltage Density
eN_WB
RWB = 5 kΩ, RS = 0
9
nV/√Hz


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