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IRFPE30 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFPE30
상세설명  WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFPE30 데이터시트(HTML) 2 Page - International Rectifier

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IRGP50B60PDPbF
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Notes:
 RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
‚ VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22 Ω.
ƒ Pulse width limited by max. junction temperature.
„ Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
… C
oes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
Ref.Fig
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
VGE = 0V, IC = 500µA
∆V
(BR)CES/∆TJ
Temperature Coeff. of Breakdown Voltage
—0.61
V/°C VGE = 0V, IC = 1mA (25°C-125°C)
RG
Internal Gate Resistance
1.2
1MHz, Open Collector
—2.0
2.2
IC = 33A, VGE = 15V
4, 5,6,8,9
VCE(on)
Collector-to-Emitter Saturation Voltage
2.4
2.6
V
IC = 50A, VGE = 15V
—2.6
2.9
IC = 33A, VGE = 15V, TJ = 125°C
—3.2
3.6
IC = 50A, VGE = 15V, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0
4.0
5.0
V
IC = 250µA
7,8,9
∆V
GE(th)/∆TJ
Threshold Voltage temp. coefficient
-7.07
mV/°C VCE = VGE, IC = 1.0mA
gfe
Forward Transconductance
42
S
VCE = 50V, IC = 33A, PW = 80µs
ICES
Collector-to-Emitter Leakage Current
5.0
500
µA
VGE = 0V, VCE = 600V
—1.0
mA
VGE = 0V, VCE = 600V, TJ = 125°C
—1.3
1.7
IF = 25A, VGE = 0V
VFM
Diode Forward Voltage Drop
1.5
2.0
V
IF = 50A, VGE = 0V
10
—1.3
1.7
IF = 25A, VGE = 0V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
±100
nA
VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Ref.Fig
Qg
Total Gate Charge (turn-on)
240
360
IC = 33A
17
Qgc
Gate-to-Collector Charge (turn-on)
41
82
nC
VCC = 400V
CT1
Qge
Gate-to-Emitter Charge (turn-on)
84
130
VGE = 15V
Eon
Turn-On Switching Loss
360
590
IC = 33A, VCC = 390V
CT3
Eoff
Turn-Off Switching Loss
380
420
µJ
VGE = +15V, RG = 3.3Ω, L = 210µH
Etotal
Total Switching Loss
740
960
TJ = 25°C
fÃÃ
td(on)
Turn-On delay time
34
44
IC = 33A, VCC = 390V
CT3
tr
Rise time
26
36
ns
VGE = +15V, RG = 3.3Ω, L = 210µH
td(off)
Turn-Off delay time
130
140
TJ = 25°C
fÃÃ
tf
Fall time
43
56
Eon
Turn-On Switching Loss
610
880
IC = 33A, VCC = 390V
CT3
Eoff
Turn-Off Switching Loss
460
530
µJ
VGE = +15V, RG = 3.3Ω, L = 210µH
11,13
Etotal
Total Switching Loss
1070
1410
TJ = 125°C
f
WF1,WF2
td(on)
Turn-On delay time
33
43
IC = 33A, VCC = 390V
CT3
tr
Rise time
26
36
ns
VGE = +15V, RG = 3.3Ω, L = 200µH
12,14
td(off)
Turn-Off delay time
140
160
TJ = 125°C
ÃfÃÃ
WF1,WF2
tf
Fall time
50
65
Cies
Input Capacitance
4750
VGE = 0V
16
Coes
Output Capacitance
390
VCC = 30V
Cres
Reverse Transfer Capacitance
58
pF
f = 1Mhz
Coes eff.
Effective Output Capacitance (Time Related)
g
—280
VGE = 0V, VCE = 0V to 480V
15
Coes eff. (ER)
Effective Output Capacitance (Energy Related)
g
—190
TJ = 150°C, IC = 150A
3
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
CT2
Rg = 22
Ω, V
GE = +15V to 0V
trr
Diode Reverse Recovery Time
50
75
ns
TJ = 25°C
IF = 25A, VR = 200V,
19
105
160
TJ = 125°C
di/dt = 200A/µs
Qrr
Diode Reverse Recovery Charge
112
375
nC
TJ = 25°C
IF = 25A, VR = 200V,
21
420
4200
TJ = 125°C
di/dt = 200A/µs
Irr
Peak Reverse Recovery Current
4.5
10
A
TJ = 25°C
IF = 25A, VR = 200V,
19,20,21,22
—8.0
15
TJ = 125°C
di/dt = 200A/µs
CT5
Conditions


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