전자부품 데이터시트 검색엔진 |
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IRFPE30 데이터시트(PDF) 2 Page - International Rectifier |
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IRFPE30 데이터시트(HTML) 2 Page - International Rectifier |
2 / 10 page IRGP50B60PDPbF 2 www.irf.com Notes: RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22 Ω. Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
C oes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA ∆V (BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —0.61 — V/°C VGE = 0V, IC = 1mA (25°C-125°C) RG Internal Gate Resistance — 1.2 — Ω 1MHz, Open Collector —2.0 2.2 IC = 33A, VGE = 15V 4, 5,6,8,9 VCE(on) Collector-to-Emitter Saturation Voltage — 2.4 2.6 V IC = 50A, VGE = 15V —2.6 2.9 IC = 33A, VGE = 15V, TJ = 125°C —3.2 3.6 IC = 50A, VGE = 15V, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 4.0 5.0 V IC = 250µA 7,8,9 ∆V GE(th)/∆TJ Threshold Voltage temp. coefficient — -7.07 — mV/°C VCE = VGE, IC = 1.0mA gfe Forward Transconductance — 42 — S VCE = 50V, IC = 33A, PW = 80µs ICES Collector-to-Emitter Leakage Current — 5.0 500 µA VGE = 0V, VCE = 600V —1.0 — mA VGE = 0V, VCE = 600V, TJ = 125°C —1.3 1.7 IF = 25A, VGE = 0V VFM Diode Forward Voltage Drop — 1.5 2.0 V IF = 50A, VGE = 0V 10 —1.3 1.7 IF = 25A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Ref.Fig Qg Total Gate Charge (turn-on) — 240 360 IC = 33A 17 Qgc Gate-to-Collector Charge (turn-on) — 41 82 nC VCC = 400V CT1 Qge Gate-to-Emitter Charge (turn-on) — 84 130 VGE = 15V Eon Turn-On Switching Loss — 360 590 IC = 33A, VCC = 390V CT3 Eoff Turn-Off Switching Loss — 380 420 µJ VGE = +15V, RG = 3.3Ω, L = 210µH Etotal Total Switching Loss — 740 960 TJ = 25°C fÃÃ td(on) Turn-On delay time — 34 44 IC = 33A, VCC = 390V CT3 tr Rise time — 26 36 ns VGE = +15V, RG = 3.3Ω, L = 210µH td(off) Turn-Off delay time — 130 140 TJ = 25°C fÃÃ tf Fall time — 43 56 Eon Turn-On Switching Loss — 610 880 IC = 33A, VCC = 390V CT3 Eoff Turn-Off Switching Loss — 460 530 µJ VGE = +15V, RG = 3.3Ω, L = 210µH 11,13 Etotal Total Switching Loss — 1070 1410 TJ = 125°C f WF1,WF2 td(on) Turn-On delay time — 33 43 IC = 33A, VCC = 390V CT3 tr Rise time — 26 36 ns VGE = +15V, RG = 3.3Ω, L = 200µH 12,14 td(off) Turn-Off delay time — 140 160 TJ = 125°C ÃfÃÃ WF1,WF2 tf Fall time — 50 65 Cies Input Capacitance — 4750 — VGE = 0V 16 Coes Output Capacitance — 390 — VCC = 30V Cres Reverse Transfer Capacitance — 58 — pF f = 1Mhz Coes eff. Effective Output Capacitance (Time Related) g —280 — VGE = 0V, VCE = 0V to 480V 15 Coes eff. (ER) Effective Output Capacitance (Energy Related) g —190 — TJ = 150°C, IC = 150A 3 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2 Rg = 22 Ω, V GE = +15V to 0V trr Diode Reverse Recovery Time — 50 75 ns TJ = 25°C IF = 25A, VR = 200V, 19 — 105 160 TJ = 125°C di/dt = 200A/µs Qrr Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C IF = 25A, VR = 200V, 21 — 420 4200 TJ = 125°C di/dt = 200A/µs Irr Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C IF = 25A, VR = 200V, 19,20,21,22 —8.0 15 TJ = 125°C di/dt = 200A/µs CT5 Conditions |
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